发明名称 High-temperature superconducting device
摘要 A high temperature superconducting device includes a substrate (1), a ground plane (2) formed on the substrate with a prescribed pattern and made of an oxidic superconducting material, and a dielectric layer (3) formed on the substrate so as to surround the ground plane. The dielectric layer has the same crystal structure as the oxidic superconducting material and with a heat absorbance closer to that of the oxidic superconducting material than to that of the substrate.
申请公布号 US2004053079(A1) 申请公布日期 2004.03.18
申请号 US20030634808 申请日期 2003.08.06
申请人 FUJITSU LIMITED;INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER 发明人 HORIBE MASAHIRO;ISHIMARU YOSHIHIRO;HORIBE OSAMI;TANABE KEIICHI
分类号 H01L39/22;H01L39/14;H01L39/24;(IPC1-7):B32B1/00;B32B9/00;B32B19/00;H01B12/00;H01F6/00;H01L39/00 主分类号 H01L39/22
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