发明名称 |
High-temperature superconducting device |
摘要 |
A high temperature superconducting device includes a substrate (1), a ground plane (2) formed on the substrate with a prescribed pattern and made of an oxidic superconducting material, and a dielectric layer (3) formed on the substrate so as to surround the ground plane. The dielectric layer has the same crystal structure as the oxidic superconducting material and with a heat absorbance closer to that of the oxidic superconducting material than to that of the substrate.
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申请公布号 |
US2004053079(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030634808 |
申请日期 |
2003.08.06 |
申请人 |
FUJITSU LIMITED;INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER |
发明人 |
HORIBE MASAHIRO;ISHIMARU YOSHIHIRO;HORIBE OSAMI;TANABE KEIICHI |
分类号 |
H01L39/22;H01L39/14;H01L39/24;(IPC1-7):B32B1/00;B32B9/00;B32B19/00;H01B12/00;H01F6/00;H01L39/00 |
主分类号 |
H01L39/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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