摘要 |
A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece. |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YANG, JANG, GYOO;HOFFMAN, DANIEL, J.;CARDUCCI, JAMES, D.;BUCHBERGER, DOUGLAS, A., JR.;HAGEN, ROBERT, B. DI;MILLER, MATTHEW, L.;CHIANG, KANG-LIE;DELGADINO, GERARDO, A. |