发明名称 |
Method for producing silicon wafer and silicon wafer |
摘要 |
Silicon wafer W is thermal-annealed in atmosphere G to form new vacancies therein in a thermal annealing step and atmosphere G in the thermal annealing step contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.
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申请公布号 |
US2004053516(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030432861 |
申请日期 |
2003.05.28 |
申请人 |
NAKADA YOSHINOBU;SHIRAKI HIROYUKA |
发明人 |
NAKADA YOSHINOBU;SHIRAKI HIROYUKA |
分类号 |
H01L21/322;H01L21/324;(IPC1-7):H01L21/31;H01L21/469;H01L21/26;H01L21/42;H01L21/477 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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