METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to form a gate electrode of low resistivity, by forming a tungsten silicide layer, by making the tungsten silicide layer amorphous by an ion implantation process and by increasing the size of grains by a heat treatment process. CONSTITUTION: A doped silicon layer and an undoped silicon layer are stacked on a substrate(20). A crystalline metal silicide layer is formed on the stacked silicon layer. Ions are implanted into the crystalline metal silicide layer to form an amorphous metal silicide layer. A heat treatment is performed on the amorphous metal silicide layer to crystallize the amorphous metal silicide layer.