发明名称 SENSE AMPLIFIER FOR SENSING MICRO-VOLTAGE DIFFERENCE AND SENSING METHOD THEREOF
摘要 PURPOSE: A sense amplifier for sensing a micro-voltage difference and a sensing method thereof are provided to sense easily the micro-voltage difference by turning-off a bit line separation transistor. CONSTITUTION: A sense amplifier for sensing a micro-voltage difference includes a couple of bit line separation transistors(204a,204b), a couple of voltage-dependent capacitors(206a,206b), and a sense amplifier unit(202). The bit line separation transistors(204a,204b) are used for dividing the first bit line and the second bit line into two parts, respectively. The voltage-dependent capacitors(206a,206b) are connected to the bit line connected to sources of the bit line separation transistors and the ground part. The sense amplifier unit(202) is connected to the bit line connected to the voltage-dependent capacitors in order to sense and amplify the voltage difference between the voltage-dependent capacitors.
申请公布号 KR20040023224(A) 申请公布日期 2004.03.18
申请号 KR20020054904 申请日期 2002.09.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, GI TAE
分类号 G11C11/407;G11C11/4091;G11C11/4094;(IPC1-7):G11C11/407 主分类号 G11C11/407
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