NITRIDE SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor device having an electrode having high barrier height in a Schottky junction with a nitride semiconductor and high adhesion with the nitride semiconductor and a method for manufacturing the nitride semiconductor device. SOLUTION: The method for manufacturing the semiconductor device formed on the nitride semiconductor is provided with a process for forming the electrode 10 on the nitride semiconductor 3 and the electrode forming process is provided with a process for laminating a 1st substance containing a 1st element on the nitride semiconductor, a process for laminating a 2nd substance containing a 2nd element 7a having a work function larger than that of the 1st element on the 1st substance layer and a process for diffusing the 2nd element near a boundary between the nitride semiconductor and the 1st substance by heat treatment. COPYRIGHT: (C)2004,JPO