| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate circuit of an insulated gate type semiconductor element which can shorten a turn-off time of the semiconductor element. SOLUTION: In order to drive the insulated gate type semiconductor element 10, two sets of series connecting units in which semiconductor elements 12, 13 and 15, 16 are connected in a totem pole connection, are provided. Positive and negative power sources are connected to anodes via resistors 23, 24, 25 and 26, The mid-point of the elements 12, 13 is connected through a resistor 11 and the mid-point of the elements 15, 16 is connected directly to the gate G of the semiconductor element 10 so that a switching signal is delayed by delay circuits 18, 19 and supplied to the elements 15, 16. A switching element 27 is provided in parallel with the resistor 24 connected in series with the negative side semiconductor element 13 of the first series connecting unit. The switching element 27 is controlled on or off by an output signal of a one-shot signal generator circuit 28 to early discharge charge stored in the semiconductor element. COPYRIGHT: (C)2004,JPO
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