| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor devices to form IPO capacitors, bipolar transistors and CMOSFETs on a substrate, in which a thermal oxide film of the polycrystal silicon film as a lower side electrode is formed as an insulating layer of the IPO capacitor to reduce the number of manufacturing processes. SOLUTION: A gate oxide film 12 of the CMOSFET is formed, a base 17 of the bipolar transistor is formed, and the polycrystal silicon film 41 is formed on the silicon substrate 1 where an emitter region of the base 17 is exposed. A thermal oxide film 61 is formed on the surface by a heat treatment after addition of an impurity to this polycrystal silicon film 41, and an emitter 62 is formed by diffusing the impurity to the emitter region. An emitter electrode of the bipolar transistor, a lower electrode of the capacitor, and a gate electrode of the CMOSFET are simultaneously formed from the polycrystal silicon film 41 after the heat treatment. COPYRIGHT: (C)2004,JPO
|
