SEMICONDUCTOR DEVICE EQUIPPED WITH ELECTROSTATIC DISCHARGE PROTECTION MEANS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a means for protecting an IC (integrated circuit) integrated on a semiconductor substrate, from static discharge. SOLUTION: In the IC, a semiconductor n+ layer is formed so as to be contacted with a conductor layer (projected part) 51 below a bonding pad 2 and pn junctions are formed cylindrically in the direction of thickness of a chip between the lower surface of the semiconductor substrate 4 and the conductor layer 51, while the function of a diode 5 of positive direction characteristics is provided in a direction from the lower surface of the chip to the upper surface of the same to use it as the branched passage of electrostatic energy and retain a large resistance against charge. COPYRIGHT: (C)2004,JPO