REFERENCE VOLTAGE GENERATION FOR MEMORY CIRCUITS

摘要

An improved reference voltage generation is described. In one embodiment, a memory block includes a plurality of memory cells interconnected by wordlines and bitlines. A plurality of reference cells are provided. A bitline includes a reference cell. The bitlines of the memory block are divided into groups or bitlines. Only the reference cells within a group are interconnected to average out the reference cell charge variation to improve the sensing window.