| 摘要 |
PURPOSE: A pre-stage gate type thin film transistor substrate and a color filter substrate are provided to reduce an aperture ratio of a pixel region located between a storage capacitor line and the first gate line. CONSTITUTION: A pre-stage gate type thin film transistor substrate includes an insulating substrate, 1 to n gate lines(121) formed on the insulating substrate, a gate electrode(123) that is a part of each of the gate lines, and a gate pad connected to one end of each of the gate lines. The thin film transistor substrate further includes a storage capacitor line(G0) formed at a previous stage of the first gate line, a gate insulating layer formed on the insulating substrate, a semiconductor layer formed on the gate insulating layer, 1 to m data lines(171) that intersect the gate lines and define n x m pixel regions(PX), a source electrode(173) extended from each of the data lines and connected to one side of the semiconductor layer, a drain electrode(175) formed at the other side of the semiconductor layer, and a data pad connected to one end of each of the data lines. The thin film transistor substrate also has a passivation layer that is formed on the insulating substrate and includes a contact hole, and a pixel electrode(190) connected to the drain electrode through the contact hole. The thin film transistor substrate further includes a light-shielding pattern(201) formed on the same level as the gate line or data line corresponding to th pixel region located between the storage capacitor line and the first gate line. |
