| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method by which a high-quality crystalline silicon thin film semiconductor device can be manufactured at a low cost. <P>SOLUTION: Since a semiconductor laser 7 is used as a light source, large-area silicon films can be irradiated collectively by arranging the films in parallel with each other and a fundamental wave can be used for laser-beam crystallization. Therefore, processing can be performed efficiently by utilizing energy effectively. Consequently, the high-quality crystalline silicon thin film semiconductor device can be obtained at a low cost. <P>COPYRIGHT: (C)2004,JPO</p> |
