| 摘要 |
PROBLEM TO BE SOLVED: To highly accurately and quickly discriminate an area [Pv], an area [Pi] and a boundary between these areas [Pv], [Pi] without depending on the concentration of oxygen solid-solved in an ingot. SOLUTION: The surface of a measuring sample including areas [V], [Pv], [Pi], [I] obtained by slicing a p type silicon monocrystal ingot in the axial direction is polluted with transition metals. The sample is treated with heat of a 1st temperature to diffuse the transition metals in the sample, the sample is treated with heat of a 2nd temperature to form metallic silicide from the transition metals diffused in the sample and then the sample is treated with heat of a 3rd temperature to solve the metallic silicide formed in the sample. The concentration of a recombination center formed by the transition metals in the whole sample is measured to find out a correlation function. The minor carrier diffusion lengths of the sample before and after irradiation of heat or light energy are measured and a difference between both the measured values is found out. The areas [Pv], [Pi] of the sample and the boundary between both the areas [Pv], [Pi] are regulated from the correlation function and the difference. COPYRIGHT: (C)2004,JPO
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