发明名称 |
Semiconductor wafer and its manufacturing method |
摘要 |
A method of epitaxially growing a SiC film on a Si substrate, including: (a) supplying a raw material gas containing a gas having P (phosphorus) element and a gas having B (boron) element on a Si substrate, and thereby synthesizing an amorphous BP thin film having a thickness of 5 nm or more and 100 nm or less on the Si substrate; (b) further supplying a raw material gas containing a gas having P element and a gas having B element on the Si substrate, and thereby synthesizing a cubic boron phosphide single crystal film having a thickness of 5 nm or more and 1000 nm or less on the Si substrate; and (c) supplying a gas having carbon element and a gas having silicon element on the Si substrate thereon the BP single crystal film is formed, and thereby synthesizing a beta-SiC single crystal film or an amorphous SiC film having a thickness of 1 nm or more and several hundreds nanometers or less on the cubic boron phosphide single crystal film on the Si substrate.
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申请公布号 |
US2004053438(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030432597 |
申请日期 |
2003.06.03 |
申请人 |
ABE YOSHIHISA;SUZUKI SHUNICHI;NAKANISHI HIDEO;TERASHIMA KAZUTAKA;KOMIYAMA JUNO |
发明人 |
ABE YOSHIHISA;SUZUKI SHUNICHI;NAKANISHI HIDEO;TERASHIMA KAZUTAKA;KOMIYAMA JUNO |
分类号 |
C30B25/02;H01L21/04;(IPC1-7):H01L21/00;H01L21/20;H01L21/336 |
主分类号 |
C30B25/02 |
代理机构 |
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地址 |
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