发明名称 |
Attenuated embedded phase shift photomask blanks |
摘要 |
An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
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申请公布号 |
US2004053026(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030657665 |
申请日期 |
2003.09.08 |
申请人 |
ANGELOPOULOS MARIE;BABICH KATHERINA E.;BROOKS CAMERON JAMES;CHEY S. JAY;GUARNIERI C. RICHARD;HIBBS MICHAEL STRAIGHT;RACETTE KENNETH CHRISTOPHER |
发明人 |
ANGELOPOULOS MARIE;BABICH KATHERINA E.;BROOKS CAMERON JAMES;CHEY S. JAY;GUARNIERI C. RICHARD;HIBBS MICHAEL STRAIGHT;RACETTE KENNETH CHRISTOPHER |
分类号 |
C23C14/06;C23C14/35;G03F1/00;G03F1/08;G03F7/16;(IPC1-7):B32B1/00;B32B9/00;B32B17/06;B32B15/00;B32B9/04;G02B5/08;G02B5/20;F21V9/04;F21V9/06;C23C14/34;C23C14/08;H05H1/00;H05H1/24 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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