| 发明名称 |
REFRESHING MEMORY CELLS OF A PHASE CHANGE MATERIAL MEMORY DEVICE |
| 摘要 |
A technique includes determining whether a storage level of a phase change memory cell is within a predefined margin from a resistance threshold. In response to the determination, the cell is selectively written. |
| 申请公布号 |
WO2004013862(A3) |
申请公布日期 |
2004.03.18 |
| 申请号 |
WO2003US18066 |
申请日期 |
2003.06.09 |
| 申请人 |
INTEL CORPORATION |
发明人 |
PARKINSON, WARD, D.;LOWREY, TYLER, A. |
| 分类号 |
G11C11/00;G11C11/34;G11C16/26;G11C16/34 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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