发明名称 SILICON SUBSTRATE DEVICE AND ITS MANUFACTURING METHOD
摘要 <p>A first micro-width rectangular groove having a rectangular cross-section, and a second micro-width rectangular groove having a rectangular cross-section and being substantially orthogonal to the first micro-width rectangular groove are made in a first silicon substrate. A third micro-width rectangular groove having a rectangular cross-section is made oppositely to the first micro-width rectangular groove in a second silicon substrate. An element substrate provided with a frequency converting element is disposed in the second micro-width rectangular groove such that the frequency converting element is located at the perpendicularly intersecting part of the first and second micro-width rectangular grooves. Furthermore, the first silicon substrate provided with the element substrate and the second silicon substrate are pasted together such that the first and third micro-width rectangular grooves face each other thus forming a rectangular waveguide comprising the first and third micro-width rectangular grooves and propagating a high frequency receiving signal before it is beamed to the frequency converting element.</p>
申请公布号 WO2004023644(A1) 申请公布日期 2004.03.18
申请号 WO2002JP08964 申请日期 2002.09.04
申请人 KUMAGAI, MUNEHITO;MITSUBISHI DENKI KABUSHIKI KAISHA;YOSHIDA, YUKIHISA;MATSUURA, TSUKASA;HONMA, YUKIHIRO 发明人 KUMAGAI, MUNEHITO;YOSHIDA, YUKIHISA;MATSUURA, TSUKASA;HONMA, YUKIHIRO
分类号 H03D9/06;(IPC1-7):H03D9/06;H01P11/00;H01P3/12;H01L39/22 主分类号 H03D9/06
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