| 摘要 |
Reactor comprises a growing chamber (11) having an intermediate storage region (13) for temporarily storing melts (35) and a growing region (15) for holding a substrate (25). The growing chamber is able to tilt between a stand-by position, in which the melt in the growing chamber is collected in the intermediate storage region, and a growing position, in which the melt is collected in the growing region, to grow a crystal layer on the substrate. An Independent claim is also included for a process for the liquid phase epitaxial growth on semiconductor substrates.
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