| 摘要 |
PURPOSE: A method for fabricating a liquid crystal display is provided to increase a capacitance value of a storage capacitor. CONSTITUTION: A thin film transistor is formed at the intersection of a gate line(32) and a data line. A passivation layer(48) is formed on a substrate(31) on which the thin film transistor is formed. The passivation layer is selectively removed using an exposure mask to form a through-hole(56) and a drain contact hole(50). A pixel electrode(52) is formed such that the pixel electrode is connected to a gate insulating layer(42) and a drain electrode(40) of the thin film transistor through the through-hole and the drain contact hole, respectively. The thin film transistor is formed in a manner that the gate line and a gate electrode(36) are simultaneously formed on the substrate, the gate insulating layer is formed on the substrate to cover the gate electrode and the gate line, a semiconductor layer(44) is formed on the gate insulating layer, and source and drain electrodes are formed on the substrate including the semiconductor layer. |
