| 摘要 |
PURPOSE: A method for fabricating a semiconductor laser diode is provided to simplify a fabrication process by forming a prevention layer for leakage current with a single layer of In1-xGaxP. CONSTITUTION: A first clad layer, an active layer, and a second clad layer are sequentially laminated on an upper surface of a semiconductor substrate(11). A leakage current prevention layer is formed in the inside of the second clad layer. The prevention layer for leakage current is formed with a single layer of In1-xGaxP. The thickness of the prevention layer for leakage current is about 200 to 300 angstrom. The prevention layer for leakage current includes the In1-xGaxP of 0.1 weight percent. An InP layer is formed between the active layer and the prevention layer for leakage current of the second clad.
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