| 摘要 |
PURPOSE: A method for forming a pad of a semiconductor device is provided to prevent a dimple phenomenon due to a step between a passivation layer and a pad part by opening a metal interconnection of the pad part to be a line-spacer structure and by depositing Au by a bump process using a sputtering method so as to perform a gap-fill process. CONSTITUTION: The first and second interlayer dielectrics(101,102) are sequentially formed on a semiconductor substrate(100) having a predetermined underlying structure. A metal interconnection(103) is formed on the second interlayer dielectric. A passivation layer(104) is deposited to bury the metal interconnection. A planarization layer(105) is deposited on the passivation layer to planarize the surface of the resultant structure. After a photoresist layer is formed on the planarization layer, a photoresist layer pattern of a line-spacer structure is formed to expose a portion corresponding to the metal interconnection. The planarization layer and the passivation layer are patterned by using the photoresist layer pattern of the line-spacer structure until the metal interconnection is exposed. Au(106) is deposited on the patterned line-spacer structure by a bump process using a sputtering method.
|
