| 摘要 |
PROBLEM TO BE SOLVED: To deposit aβ-FeSi<SB>2</SB>film having high crystallinity on an Si substrate. SOLUTION: The method is provided with a cleaning stage where an Si substrate is subjected to heating cleaning; an initial layer forming stage where an initial layer consisting ofβ-FeSi<SB>2</SB>is formed on the Si substrate at a first temperature; and a growing stage where the initial layer is grown at a second temperature higher than the first temperature. The first temperature is, e.g., 440 to 520°C. The second temperature is, e.g., 700 to 760°C. Theβ-FeSi<SB>2</SB>film having high crystallinity can be obtained by forming the initial layer at the relatively low temperature, and then growing the same at the temperature higher than that. COPYRIGHT: (C)2004,JPO
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