| 发明名称 |
Nitride semiconductor light-emitting device and optical device including the same |
| 摘要 |
A nitride semiconductor light-emitting device includes an emission layer (103) formed on a substrate (100), and the emission layer includes a quantum well layer of GaN1-x-y-zAsxPySbz (0<x+y+z<=0.3) containing Al.
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| 申请公布号 |
US2004051105(A1) |
申请公布日期 |
2004.03.18 |
| 申请号 |
US20030363955 |
申请日期 |
2003.08.01 |
| 申请人 |
TSUDA YUHZOH;ITO SHIGETOSHI;MORISHIGE KOUICHI |
发明人 |
TSUDA YUHZOH;ITO SHIGETOSHI;MORISHIGE KOUICHI |
| 分类号 |
H01L33/06;H01L33/30;H01L33/32;H01S5/343;(IPC1-7):H01L27/15;H01L31/12;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
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