发明名称 |
Semiconductor device with element isolation using impurity-doped insulator and oxynitride film |
摘要 |
In a trench (2), an oxynitride film (31ON1) and a silicon oxide film (31O1) are positioned between a doped silicon oxide film (31D) and a substrate (1), and a silicon oxide film (31O2) is positioned closer to the entrance of the trench (2) than the doped silicon oxide film (31D). The oxynitride film (31ON1) is formed by a nitridation process utilizing the silicon oxide film (31O1). The vicinity of the entrance of the trench (2) is occupied by the silicon oxide films (31O1, 31O2) and the oxynitride film (31ON1).
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申请公布号 |
US2004053458(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20030377829 |
申请日期 |
2003.03.04 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KUROI TAKASHI;YAMASHITA TOMOHIRO;HORITA KATSUYUKI |
分类号 |
H01L21/76;H01L21/762;H01L21/8234;H01L29/78;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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