发明名称 |
Method of forming self-aligned contact structure with locally etched gate conductive layer |
摘要 |
A method of forming a self-aligned contact structure with a locally etched conductive layer comprises the steps of: preparing a substrate formed with gate structures comprising a first conductive layer, a second conductive layer, and an insulating layer; depositing a photoresist material layer on the substrate; performing a lithographic step with a bit-line contact node photomask or a bit-line contact photomask to expose a portion of the surface of the substrate; etching the exposed second conductive layer with an etchant; removing the remaining photoresist material layer; forming a sidewall spacer on the sidewalls of each gate structure; forming a dielectric layer to cover the substrate; and performing lithographic and etching steps to remove the dielectric layer and to form self-aligned contact structure.
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申请公布号 |
US2004051183(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20020330522 |
申请日期 |
2002.12.27 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
TUNG MING-SHENG;LEE YUEH-CHUAN |
分类号 |
H01L21/336;H01L21/60;H01L23/485;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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