发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, RECORDING MEDIUM STORED WITH CELL LIBRARY, AND METHOD FOR DESIGNING SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 ÄObjectÜ To provide a semiconductor integrated circuit device constructed of MOSFETs in which there is attained a harmony between increase in consumption power due to a leakage current and operating speed of the MOSFETs in a suitable manner. ÄConstitutionÜ Among a plurality of signal paths in the semiconductor integrated circuit device, a path which has a margin in delay is constructed with MOSFETs each with a high threshold voltage, while a path which has no margin in delay is constructed with MOSFETs each with a low threshold voltage which has a large leakage current but a high operating speed, in light of a delay with which a signal is transmitted along a signal path. <IMAGE>
申请公布号 KR20040023618(A) 申请公布日期 2004.03.18
申请号 KR20037016302 申请日期 2003.12.12
申请人 发明人
分类号 H03K19/00;G06F17/50;H01L21/822;H01L27/04;H03K19/0944;H03K19/173 主分类号 H03K19/00
代理机构 代理人
主权项
地址