| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition having high transparency to light with wavelength ≤250 nm, especially to ArF excimer laserbeam and resist performance such as high sensitivity, excellent in dry etching tolerance, and suitable for far-ultraviolet light excimer laser lithography, electronic beam lithography, etc., and to provide a method for forming fine patterns using the composition. <P>SOLUTION: The polymer comprises one or two or more kinds of monomers selected from formulas (1) to (3) as constituting monomers. <P>COPYRIGHT: (C)2004,JPO |
