| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a base material for lithography having preferable film forming properties while keeping high absorbance characteristics. <P>SOLUTION: The base material for lithography is obtained by mixing (a) a crosslinking agent comprising a specified nitrogen-containing compound, (b) two kinds of (meth)acrylate units expressed by general formulae (1) and (2), and (c) an organic solvent. In formula (1), R<SP>1</SP>represents a hydroxyl group, a carboxyl group or the like, and X represents a 1 to 4C alkyl chain. In formula (2), R<SP>2</SP>represents a hydroxyl group, a carboxyl group or the like, Y represents -SO<SB>2</SB>-, -CO- or -SO-, and n represents 1 to 4. <P>COPYRIGHT: (C)2004,JPO |
