| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which edge roughness can be suppressed when forming a very fine resist pattern. SOLUTION: A very fine resist pattern is covered with a film having a higher heat resistant temperature than the softening temperature of the resist pattern, and the resist pattern is heated at the temperature of the softening temperature or higher but the heat resistant temperature or lower in this state to permit reflow of the resist pattern. COPYRIGHT: (C)2004,JPO |
