发明名称 |
Semiconductor memory device and method of controlling the same |
摘要 |
A semiconductor memory device has a memory cell array which includes memory cells arranged in a matrix form, word lines, bit lines, a decoding circuit and sense unit. The decoding circuit is supplied with an address signal and a first control signal and drives a selected word line which is the word line specified by the address signal or an adjacent word line which is the word line adjacent to the selected word line on the basis of the first control signal. The sense unit is connected to the bit line and reads data stored in the memory cell which is connected to the word line driven by the decoding circuit.
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申请公布号 |
US2004052142(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
US20020298004 |
申请日期 |
2002.11.18 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
IKEHASHI TAMIO;OHSAWA TAKASHI |
分类号 |
H01L27/108;G11C11/401;G11C11/402;G11C11/404;G11C11/406;G11C11/407;G11C11/4076;G11C11/408;H01L21/8242;H01L29/786;(IPC1-7):G11C7/02 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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