| 摘要 |
A method for manufacturing a column grid array semiconductor package (10,210) may include the steps of providing a substrate material (14,114,214) having a first side (16,116) and a second side (18), forming a plurality of holes (36,136,236) in the substrate (14,114,214), forming contacts (24,124) on the first surface (16,116) of the substrate (14,114,214), filling the plurality of holes (36,136,236) with a conductive material (32,132,232) to an extent that an extension portion (28,128,228) is formed on the second side (18) of the substrate (14,114,214) to which an electrical contact may be made. The extension portion (28,128,228) may be coated with a capping material (40,140,240). The holes (36,136,236) may be filled with the conductive material (32,132,232) by forming a resist layer (146,246) over the hole (36,136,236) on the first side (16,116) of the substrate (14,114,214) and filling the holes (36,136,236) with the conductive material (32,132,232). The resist (146,246) may then be removed. <IMAGE> |
