Manufacture of microelectronic structure comprises forming set of openings in surface of substrate, forming film stack, exposing oxide layer and silicon layer on portion of structure, and thermally nitriding silicon layer

摘要

Microelectronic structure is manufactured by: (i) forming set of openings in surface of substrate (10); (ii) forming film stack having layers on each sidewall of openings; (iii) exposing oxide layer on lower portion of structure and silicon layer on upper portion of structure; and (iv) thermally nitriding silicon layer on upper portion of structure. Fabrication of microelectronic structure comprises: (a) forming set of openings in surface of substrate; (b) forming film stack having layers on each sidewall of openings; (c) exposing oxide layer on lower portion of structure and silicon layer on upper portion of structure; and (d) thermally nitriding silicon layer on upper portion of structure to form nitrided silicon layer having first thickness limited through reaction kinetics and less than barrier thickness. The openings have sidewalls that extend to a common bottom wall. The layers include nitride diffusion barrier layer having a barrier thickness and silicon layer deposited after the barrier layer.