| 摘要 |
PURPOSE: A method for etching a pad part of a semiconductor device is provided to simplify a fabricating process and improve productivity by etching a passivation layer, the second planarizing insulation layer, a polysilicon etch stopper and the first planarizing insulation layer in the same etching apparatus by using an in-situ recipe. CONSTITUTION: The pad part of the semiconductor device in which a polysilicon layer for a pad, the first planarizing oxide layer, a polysilicon etch stopper, the second planarizing oxide layer and the passivation layer are sequentially formed is formed on a semiconductor substrate(200). The passivation layer, the second planarizing oxide layer, the polysilicon etch stopper and the first planarizing oxide layer are etched by using one etching apparatus using an in-situ recipe to open the polysilicon layer for the pad(220).
|
