| 摘要 |
PURPOSE: A sensing enable control unit for semiconductor memory is provided to prevent fail of reading operation within the read pulse time due to the delay effect of the operating speed by using a bit line sensing enable signal and a bit line sensing disable signal. CONSTITUTION: A sensing enable control unit for semiconductor memory includes a word line selection signal generation unit, a delay unit, a Schmitt trigger(50), a bit line sensing enable signal generator(52), a bit line sensing disable signal generator(54), a switch driving unit(56), and a switch(58). The word line selection signal generation unit generates a word line selection signal. The delay unit generates a delay signal having the same delay period as the word line selection signal generation unit. The Schmitt trigger(50) detects a word line enable detection signal from an output signal of the delay unit. The bit line sensing enable signal generator(52) generates a bit line sensing enable signal by delaying the word line enable detection signal. The bit line sensing disable signal generator(54) generates a bit line sensing disable signal by delaying the output signal of the delay unit. The switch driving unit(56) outputs a word line sensing enable selection signal and a word line sensing disable selection signal. The switch(58) outputs selectively a word line sensing enable signal and word line sensing disable signal.
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