METHOD FOR FORMING MASK PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a mask pattern by which the period required for OPC (optical proximity correction) treatment can be reduced even when the number of correction parameters increases.

SOLUTION: The method for forming the mask pattern uses techniques of optical proximity correction of the mask pattern having a phase shift region with a plurality off transmittance. The method includes a step of OPC treatment to carry out the optical proximity correction on the assumption of a single layer phase shift mask, a step of determining the transmittance after the optical proximity correction, and a step of applying a mask bias corresponding to the transmittance after the transmittance is determined. A phase shift mask with lowest transmittance in a plurality of transmittance is subjected to the optical proximity correction. The transmittance is determined by the line width of the mask pattern and the pattern spacing, or the transmittance is determined by the amount of the optical proximity correction.

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