| 摘要 |
PROBLEM TO BE SOLVED: To provide a Schottky barrier diode whose parasitic current is small as compared with its output current and which has good characteristics. SOLUTION: Semiconductor areas 11a and 11b of the same conductivity as a separation area 4 and a substrate 1 are formed between contact areas 9a and 9b and the separation area 4. On the top surfaces of the semiconductor areas 11 and 11b, 3rd electrodes 12a and 12b are provided, and the 2nd electrodes 7a and 7b and 3rd electrodes 12a and 12b are short-circuited with conductors. Consequently, a characteristic-improved transistor Qc is formed which has a guard ring 9 as its emitter and semiconductor areas 11a and 11b as its collectors, and the parasitic current is reduced through the mirror circuit operation of the characteristic-improved transistor Qc. COPYRIGHT: (C)2004,JPO |
