| 摘要 |
PROBLEM TO BE SOLVED: To suppress the growth of plating to the surface of a semiconductor ceramic element assembly which should not be plated. SOLUTION: A complexing agent(e.g., glutamic acid) to form a chelate with Ni precipitated as plating is added to an Ni plating liquid 4 to prepare the Ni plating liquid 4 so as to be a hydrogen ion exponent pH of 6 to 12. Further, a masking agent (e.g., a quinoline compound) masking the eluted ions of Cu or the like eluted from a semiconductor ceramic element assembly is added to the Ni plating liquid 4, and electroplating is performed using the Ni plating liquid 4. Then, a filtering apparatus 9 filled with a filter supporting hydroquinone reducing the eluted ions is connected to plating tank 5 via circulation pipes 10a and 10b, and electroplating is performed while filtering the Ni plating liquid 4 with the filtering apparatus 9, so that the eluted ions are reduced away. COPYRIGHT: (C)2004,JPO
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