发明名称 |
Static random access memory component has load transistor in active region lying at an angle to drive transistor active region |
摘要 |
An SRAM component comprises two NMOS access transistors (TA1,TA2) and pairs of NMOS drive transistors (TN1,TN2) and PMOS load transistors (TP1,TP2), each forming inverters which are selectively activated on the operation of the second and first access transistors respectively. An Independent claim is also included for an additional SRAM component as above.
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申请公布号 |
DE10338986(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
DE2003138986 |
申请日期 |
2003.08.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, CHANG-BONG;KIM, YOUNG-WUG |
分类号 |
H01L27/08;G11C11/412;H01L21/8238;H01L21/8244;H01L21/84;H01L27/092;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L27/11;G11C11/40 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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