NON-VOLATILE MEMORY DEVICE WITH SELECT TRANSISTOR STRUCTURE AND SILICON-OXIDE-NITRIDE-OXIDE-SILICON CELL STRUCTURE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory(NVM) device with a select transistor structure and a silicon-oxide-nitride-oxide-silicon(SONOS) cell structure is provided to perform the program operation of a byte unit through a proper circuit connection unit by controlling the program operation in a SONOS cell by a select transistor. CONSTITUTION: A semiconductor substrate(200) is prepared. A source region(202) and a drain region(204) are formed in a predetermined upper region of the semiconductor substrate, separated from each other. An impurity region(206) of a floating state is formed in a predetermined upper region of the semiconductor substrate between the source region and the drain region. A vertical structure(210) where a tunneling layer(212), a charge trapping layer(214) and a blocking layer(216) are sequentially formed is disposed in the first region on the semiconductor substrate between the source region and the impurity region. A control gate insulation layer(222) is disposed between the source region and the impurity region, adjacent to the vertical structure. A control gate electrode(232) is formed on the vertical structure and the control gate insulation layer. A gate insulation layer(224) is formed on the semiconductor substrate between the impurity region and the drain region. A gate electrode(234) is formed on the gate insulation layer.