发明名称 METHOD FOR FABRICATING METAL-INSULATOR-METAL CAPACITOR
摘要 PURPOSE: A method for fabricating a metal-insulator-metal(MIM) capacitor is provided to basically prevent a leakage current by applying an insulation material to the sidewall of a dielectric and a lower electrode layer. CONSTITUTION: A metal material layer(302) for a lower electrode and an insulation material layer(304) for a dielectric are sequentially deposited on a metal layer(300). The metal material layer for the lower electrode and the insulation material layer for the dielectric are etched by using an MIM capacitor pattern. After an insulation layer is applied to the lower electrode layer and the dielectric layer, an etch-back process is performed until the dielectric layer is exposed. A metal material layer(308) for an upper electrode is deposited on the insulation material layer for the dielectric. The metal material for the upper electrode is etched to form the MIM capacitor by using the MIM capacitor pattern.
申请公布号 KR20040022952(A) 申请公布日期 2004.03.18
申请号 KR20020054552 申请日期 2002.09.10
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 LEE, DAE GEUN
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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