| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory cell and a storage device using the cell capable of operating at low voltage with a variable resistor element which consists of thin-film material having a perovskite structure (for example, PCMO) or the like, as a memory element and of being highly integrated. <P>SOLUTION: MC indicates a memory cell and is composed of a combination of current controlling element Qc and a variable resistor element Rc. A field-effect transistor is used as the current controlling element Qc. The current controlling element Qc is serially connected to a current path of the variable resistor element Rc so as to control the current flowing through the variable resistor element Rc. <P>COPYRIGHT: (C)2004,JPO |
