MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To assure a great margin of selective recording into each memory unit by suppressing variations in inverse magnetic field between the memory units and the deviation of asteroids. SOLUTION: The magnetoresistive effect element comprises a stacked structure which includes at least two ferromagnetic layers 24 and 26 and an insulation layer 25 interposed between the two ferromagnetic layers 24 and 26, with the ferromagnetic layer 26 serving as a free layer which can inverse its magnetization direction and the ferromagnetic layer 24 serving as a fixed layer with no inversion of magnetization direction. The fixed layer 26 serves as a magnetic field application member for applying a static magnetic field to the free layer 24. For the fixed layer 26 to apply the static magnetic field, the intensity of leakage magnetic field from the fixed layer 26 is set to a prescribed value or above. COPYRIGHT: (C)2004,JPO