| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting device high in In composition and also high in light emitting efficiency. SOLUTION: The laser device 50 has a laminated structure wherein a GaN-ELO (epitaxial lateral overgrowth) structure layer 54 is built on a sapphire substrate 52 and, thereon, an n-GaN contact layer 56, n-InGaN/GaN superlattice layer 58, n-Al<SB>0.07</SB>Ga<SB>0.93</SB>N cladding layer 60, n-GaN optical guide layer 62, InGaN/InGaN-MQW active layer 64, p-GaN optical guide layer 66, p-Al<SB>0.07</SB>Ga<SB>0.93</SB>N cladding layer 68, and then a p-GaN contact layer 70 are laminated. The superlattice layer is a laminated superlattice layer wherein an n-In<SB>0.05</SB>Ga<SB>0.95</SB>N/n-GaN superlattice layer is grown for ten cycles, and its lattice constant is higher than that of the n-GaN contact layer below the superlattice layer but is less than that of the MQW active layer. The superlattice layer functions as a lattice relaxation layer for the n-Al<SB>0.07</SB>Ga<SB>0.93</SB>N cladding layer and for the n-GaN optical guide layer, and suppresses the occurrence of strain in the active layer. COPYRIGHT: (C)2004,JPO
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