NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a gate wiring structure of low resistance and to provide a method for manufacturing the same of high yield. SOLUTION: The nonvolatile semiconductor memory device is provided with a gate electrode where a first gate member and a second gate member are laminated on a gate insulating film. The gate member of a second layer is formed in a mushroom shape starting from the interface between the gate member of a first layer and that of the second layer. COPYRIGHT: (C)2004,JPO