| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for manufacturing a semiconductor device which can suppress the occurrence of particles in a film deposition by a chemical vapor phase growth. SOLUTION: The method for manufacturing the semiconductor device includes the steps of introducing a raw material gas obtained by vaporizing a raw material of solid or liquid at a normal temperature into a reaction chamber 10 for housing a wafer 18 through an in-line filter 34 for capturing a foreign matter, introducing reactive gas for reacting with the raw material gas into the chamber 10, and depositing the film on the wafer 18 by the chemical vapor phase growth. In this method, when the material gas is not introduced into the chamber 10 via the filter 34, the reactive gas is fed to the filter 34. COPYRIGHT: (C)2004,JPO
|
