发明名称 |
METHOD OF FORMING NITRIDE FILMS |
摘要 |
A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride form on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.
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申请公布号 |
WO03025249(A9) |
申请公布日期 |
2004.03.18 |
申请号 |
WO2002GB04151 |
申请日期 |
2002.09.12 |
申请人 |
TRIKON HOLDINGS LIMITED;PATEL, JASHU;BEEKMAN, KNUT |
发明人 |
PATEL, JASHU;BEEKMAN, KNUT |
分类号 |
C23C16/34;(IPC1-7):C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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