Epitaxial growth of an epitaxial material with silicon used in the production of semiconductor components comprises using a material containing nickel, silicon and aluminum

摘要

Epitaxial growth of an epitaxial material with silicon comprises using a material having the composition: NiSi2-xAlx or NiSi2-xGax. An Independent claim is also included for a semiconductor component having a silicon layer and an epitaxial layer made from the composition: NiSi2-xAlx or NiSi2-xGax.