发明名称 NITROGEN SOURCES FOR MOLECULAR BEAM EPITAXY
摘要 MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen - containing layers can be formed using such nitrogen sources.
申请公布号 CA2497266(A1) 申请公布日期 2004.03.18
申请号 CA20032497266 申请日期 2003.09.04
申请人 FINISAR CORPORATION 发明人 GUENTER, JAMES K.;KIM, JIN K.;JOHNSON, RALPH H.
分类号 C30B23/02;H01L21/205;(IPC1-7):C30B23/02;H01L21/203;C30B29/40 主分类号 C30B23/02
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