发明名称 |
NITROGEN SOURCES FOR MOLECULAR BEAM EPITAXY |
摘要 |
MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen - containing layers can be formed using such nitrogen sources.
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申请公布号 |
CA2497266(A1) |
申请公布日期 |
2004.03.18 |
申请号 |
CA20032497266 |
申请日期 |
2003.09.04 |
申请人 |
FINISAR CORPORATION |
发明人 |
GUENTER, JAMES K.;KIM, JIN K.;JOHNSON, RALPH H. |
分类号 |
C30B23/02;H01L21/205;(IPC1-7):C30B23/02;H01L21/203;C30B29/40 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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