| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor light emitting element which uses gallium-indium nitride in its light emitting layer and can emit highly monochromatic light. <P>SOLUTION: This group III nitride semiconductor light emitting element is provided with a constitution constructed by forming a first intermediate layer composed of Al<SB>x</SB>Ga<SB>y</SB>In<SB>z</SB>V<SB>a</SB>N<SB>1-a</SB>(wherein, V denotes a group V element of the periodic law of elements other than nitrogen, x+y+z=1, 0≤x, y, z≤1, and 0≤a<1) on a crystalline substrate and successively laminating an Al<SB>x</SB>Ga<SB>y</SB>In<SB>z</SB>V<SB>a</SB>N<SB>1-a</SB>clad layer, a gallium-indium nitride light emitting layer, and an Al<SB>x1</SB>Ga<SB>y1</SB>In<SB>z1</SB>V<SB>a1</SB>N<SB>1-a1</SB>layer upon the intermediate layer, and then, adding electrodes to the laminate. The lower part of the first intermediately layer joined to the substrate is composed of a single-crystal layer and the lower part of the layer is composed of an Al<SB>x</SB>Ga<SB>y</SB>In<SB>z</SB>N single-crystal layer having a lattice arrangement which is almost parallel to the surface of the crystalline substrate. The light emitting layer is constituted in the group III nitride semiconductor light emitting element composed of a plurality of inhomogeneous layers having different indium compositions. Consequently, the high-output light emitting element which emits the highly monochromatic light can be obtained. <P>COPYRIGHT: (C)2004,JPO |
