| 摘要 |
PROBLEM TO BE SOLVED: To prevent depositing of germanium and the abnormal shape of a trench side face, caused by the different thermal oxidization speed between thin-film layers at thermally oxidizing the side face and the bottom face of the trench so that crystal defects or surface states do not occur, and increase after embedding an insulator film for element isolation to a trench, when forming a trench, element isolating structure on a substrate having one or more thin-film layers, including a semiconductor thin-film layer having germanium as a component. SOLUTION: The trench 15 is formed on a silicon-germanium mixed crystal layer 10 and a silicon thin-film layer 11, to epitaxially grow a silicon thin-film layer 18 on the bottom face and the side face of the trench 15, and then form a silicon thermally oxidized film 19 by thermally oxidizing the thin-film layer 18 partially in the film thickness direction. Consequently, the silicon-germanium mixed crystal layer 10 and the silicon thin-film layer 11 are not oxidized, thereby the depositing of germanium or of abnormal shapes can be prevented. COPYRIGHT: (C)2004,JPO
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